Apparatus for etching substrate and method of fabricating thin-glass substrate

ABSTRACT

An apparatus for etching a substrate includes (a) a nozzle system including at least one nozzle through which acid solution containing at least hydrofluoric acid is sprayed onto the substrate, (b) a mover which moves at least one of the nozzle system and the substrate relative to the other in a predetermined direction in such a condition that the substrate and the nozzle system face each other, (c) a filter system which filters off particles out of the acid solution having been sprayed onto the substrate, and (d) a circulation system which circulates the acid solution having been sprayed onto the substrate, to the filter system, and further, to the nozzle system from the filter system.

CROSS REFERENCE TO RELATED APPLICATION

The present application is a divisional application of U.S. patentapplication Ser. No. 11/824,739 dated Jul. 2, 2007, the entire contentsof which is incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates to an apparatus for etching a substrate, a methodof fabricating a thin-glass substrate, a method of fabricating a TFT(thin film transistor) array substrate, and a method of fabricating adevice.

2. Description of the Related Art

A thin film device such as a thin film transistor (TFT) is usuallyfabricated on an electrically insulating substrate. If a thin filmdevice is to be used for a display device such as a liquid crystaldisplay device, it is usually fabricated on a transparent glasssubstrate.

In these days, a display device is required to be light, thin andflexible. To this end, a technique for fabricating a thin film device ona resin substrate is developed.

A thin film device can be fabricated on a resin substrate by either afirst process in which a thin film device is fabricated directly on aresin substrate at a low temperature to which the resin substrate has aresistance, or a second process including steps of fabricating a thinfilm device on a glass substrate in a conventional manner, andtransferring the thin film device onto a resin substrate.

With respect to the above-mentioned second process, many processes havebeen suggested as follows.

For instance, there has been suggested a process including steps offabricating a thin film transistor array on a glass substrate, immersingthe glass substrate into hydrofluoric acid solution, supplying vortexesof hydrofluoric acid solution to the glass substrate to thereby etch theglass substrate, and transferring the thin film transistor array onto aresin substrate, in K. Takeuchi, T. Eguchi, H. Kanoh, T, Ito, and S.Otsuki, “High-rate glass etching process for transferringpolycrystalline silicon thin-film transistors to flexible substrates”,IEEE Transactions on Semiconductor Manufacturing, Vol. 18, No. 3, 2005,pp. 384-389.

Japanese Patent Application Publication No. 4-116619 (published on April1992) has suggested a process including steps of adhering a pair ofglass substrates to each other on each of which a liquid crystal displaydevice has been already fabricated, and immersing the glass substratesinto hydrofluoric acid solution for etching the glass substrates.

Japanese Patent Application Publication No. 2003-323132 has suggested aprocess including steps of forming a molybdenum film as an etchingstopper on a glass substrate, fabricating a thin film transistor arrayon the glass substrate, and immersing the glass substrates intohydrofluoric acid solution for etching the glass substrates.

The above-mentioned Publications do not describe in detail etching aglass substrate through the use of hydrofluoric acid solution.

However, Japanese Patent Application Publication No. 2003-323132describes that it takes about 3.5 hours for etching a glass substrate,in which case, an estimated etching rate is about 3 micrometers per aminute.

The above-mentioned IEEE Transactions on Semiconductor Manufacturingdescribes that if an etching rate is increased by increasing aconcentration of hydrofluoric acid in the solution, specifically, if anetching rate is increased to 6 micrometers or more per a minute by doingthe same, minute particles insoluble to hydrofluoric acid solution arelikely to adhere to a surface of the glass substrate, resulting in thatetching uniformity is deteriorated.

In the above-mentioned related art in which a glass substrate isimmersed into hydrofluoric acid solution to thereby etch the glasssubstrate, it was not possible to uniformly etch a glass substrate at ahigh etching rate. The related art takes more than two hours to etch aglass substrate, causing a problem that a through-put is quite slow asmass-production technique.

Japanese Patent No. 2722798, corresponding to Japanese PatentApplication Publication No. 4-116619 published on April 1992, hassuggested a method of fabricating a thin liquid crystal display device,including adhering a pair of glass substrates to each other with sealingmaterial being sandwiched therebetween, and etching the glass substratesthrough lower surfaces thereof to thin the glass substrates.

Japanese Patent Application Publication No. 9-159409 (published on June1997) has suggested an apparatus for detecting when surface treatment isfinished. When an etchant is supplied onto a surface of a substrate forremoving a layer formed on the surface of the substrate, the apparatusforms a fluid curtain in an area formed between the surface of thesubstrate and a measurement plane disposed facing the surface of thesubstrate. The fluid curtain is composed of the same fluid as theetchant. The apparatus includes an elevator system which contact ameasurement window to the surface of the substrate or separates themeasurement window from the surface of the substrate, an opticaldetector for measuring a distance between the measurement window and thesurface of the substrate, and a fluid curtain controller which controlsthe elevator system such that the distance between the measurementwindow and the surface of the substrate is equal to a standard distance,based on the distance between the measurement window and the surface ofthe substrate.

Japanese Patent Application Publication No. 10-268247 (published onOctober 1998) has suggested a method of fabricating a liquid crystalpanel, including adhering a first glass substrate and a second glasssubstrate to each other, introducing liquid crystal into a gap formedbetween the first and second glass substrates, and etching the first andsecond glass substrates through surfaces thereof opposite to surfacesthereof through which the first and second glass substrates are adheredto each other.

Japanese Patent Application Publication No. 11-44877 (published onFebruary 1999) has suggested an apparatus for washing a substrate,including a first unit which sprays washing solution to upper and lowersurfaces of a glass substrate fed in a single direction, a second unitwhich sprays pure water to the upper and lower surfaces of a glasssubstrate for flushing the washing solution, and a third unit for dryingthe glass substrate. Each of the first and second units is designed toinclude a plurality of nozzles inclining relative to the direction inwhich substrates are fed, and a plurality of shower pipes arrangedcrossing the direction, each having a central portion extending towardsthe direction, and opposite ends inclining relative to the direction.

Japanese Patent Application Publication No. 2004-363200 (published onDecember 2004) has suggested a method of etching a substrate, includingcoating an etchant onto a substrate, and feeding the substrate on aplurality of feeding rollers arranged in parallel with one another. Thefeeding rollers are kept at the same temperature as a temperature of theetchant.

Japanese Patent Application Publication No. 2005-247687 (published onSeptember 2005) has suggested a method of etching a glass substrate,including immersing a glass substrate into chemical solution, andexchanging the chemical solution to new one before quality of thechemical solution is degraded. The glass substrate is etched at a rateequal to or smaller than 10 micrometers per a minute.

Japanese Patent Application Publication No. 2006-121031 (published onMay 2006) has suggested an apparatus for processing a substrate,including a processor which processes a substrate with processingsolution, an exhaust pipe through which the processing solution isexhausted out of the processor, a filter arranged in the exhaust pipe,and a ultraviolet ray irradiator which irradiates ultraviolet rays tothe processing solution during the processing solution passes throughthe filter.

SUMMARY OF THE INVENTION

In view of the above-mentioned problem in the related art, it is anexemplary object of the present invention to provide an apparatus foretching a substrate which is capable of effectively preventing minuteparticles from attaching to a surface of a substrate, and accomplishinga high etching rate.

It is also an exemplary object of the present invention to provide amethod of fabricating a thin-glass substrate, a method of fabricating aTFT (thin film transistor) array substrate, and a method of fabricatinga device, all of which are capable of doing the same.

In a first exemplary aspect of the present invention, there is providedan apparatus for etching a substrate, including (a) a nozzle systemincluding at least one nozzle through which acid solution containing atleast hydrofluoric acid is sprayed onto the substrate, (b) a mover whichmoves at least one of the nozzle system and the substrate relative tothe other in a predetermined direction in such a condition that thesubstrate and the nozzle system face each other, (c) a filter systemwhich filters off particles out of the acid solution having been sprayedonto the substrate, and (d) a circulation system which circulates theacid solution having been sprayed onto the substrate, to the filtersystem, and further, to the nozzle system from the filter system.

There is further provided an apparatus for etching a substrate,including (a) a first unit for spraying acid solution containing atleast hydrofluoric acid onto the substrate, (b) a second unit for movingat least one of the first unit and the substrate relative to the otherin a predetermined direction in such a condition that the substrate andthe first unit face each other, (c) a third unit for filtering offparticles out of the acid solution having been sprayed onto thesubstrate, and (d) a fourth unit for circulating the acid solutionhaving been sprayed onto the substrate, to the third unit, and further,to the first unit from the third unit.

In a second exemplary aspect of the present invention, there is provideda method of fabricating a thin-glass substrate, including preparing anapparatus for etching a substrate, and etching a glass substratecontaining silicon dioxide as a principal constituent at an etching rateequal to or higher than 2 micrometers per a minute by means of theapparatus, wherein the apparatus includes (a) a nozzle system includingat least one nozzle through which acid solution containing at leasthydrofluoric acid is sprayed onto the substrate, (b) a mover which movesat least one of the nozzle system and the substrate relative to theother in a predetermined direction in such a condition that thesubstrate and the nozzle system face each other, (c) a filter systemwhich filters off particles out of the acid solution having been sprayedonto the substrate, and (d) a circulation system which circulates theacid solution having been sprayed onto the substrate, to the filtersystem, and further, to the nozzle system from the filter system.

In a third exemplary aspect of the present invention, there is provideda method of fabricating a TFT array substrate, including (A) adhering aprotection film onto an upper surface of a glass substrate on which athin film transistor (TFT) array has been fabricated, and (B) etchingthe glass substrate through a lower surface thereof such that the glasssubstrate has a thickness greater than 0 micrometer, but equal to orsmaller than 200 micrometers, the step (B) including preparing anapparatus for etching a substrate, and etching the glass substratecontaining silicon dioxide as a principal constituent at an etching rateequal to or higher than 2 micrometers per a minute by means of theapparatus, wherein the apparatus includes (a) a nozzle system includingat least one nozzle through which acid solution containing at leasthydrofluoric acid is sprayed onto the substrate, (b) a mover which movesat least one of the nozzle system and the substrate relative to theother in a predetermined direction in such a condition that thesubstrate and the nozzle system face each other, (c) a filter systemwhich filters off particles out of the acid solution having been sprayedonto the substrate, and (d) a circulation system which circulates theacid solution having been sprayed onto the substrate, to the filtersystem, and further, to the nozzle system from the filter system.

There is further provided a method of fabricating a TFT array substrate,including (A) adhering a protection film onto an upper surface of aglass substrate on which an etching stopper film having an etching ratefive times or more slower than an etching rate of glass to hydrofluoricacid, and a thin film transistor array have been formed in this order,and (B) etching the glass substrate through a lower surface thereof toentirely remove the glass substrate, the step (B) including preparing anapparatus for etching a substrate, and etching the glass substratecontaining silicon dioxide as a principal constituent at an etching rateequal to or higher than 2 micrometers per a minute by means of theapparatus, wherein the apparatus includes (a) a nozzle system includingat least one nozzle through which acid solution containing at leasthydrofluoric acid is sprayed onto the substrate, (b) a mover which movesat least one of the nozzle system and the substrate relative to theother in a predetermined direction in such a condition that thesubstrate and the nozzle system face each other, (c) a filter systemwhich filters off particles out of the acid solution having been sprayedonto the substrate, and (d) a circulation system which circulates theacid solution having been sprayed onto the substrate, to the filtersystem, and further, to the nozzle system from the filter system.

In a fourth exemplary aspect of the present invention, there is provideda method of fabricating a device, including (A) fabricating a device byadhering a pair of glass substrates to each other, a thin film devicehaving been fabricated on each of upper surfaces of the glasssubstrates, the glass substrates being adhered to each other such thatthe upper surfaces face each other, and (B) etching the glass substratesthrough lower surfaces thereof, the step (B) including preparing anapparatus for etching a substrate, and etching the glass substratecontaining silicon dioxide as a principal constituent at an etching rateequal to or higher than 2 micrometers per a minute by means of theapparatus, wherein the apparatus includes (a) a nozzle system includingat least one nozzle through which acid solution containing at leasthydrofluoric acid is sprayed onto the substrate, (b) a mover which movesat least one of the nozzle system and the substrate relative to theother in a predetermined direction in such a condition that thesubstrate and the nozzle system face each other, (c) a filter systemwhich filters off particles out of the acid solution having been sprayedonto the substrate, and (d) a circulation system which circulates theacid solution having been sprayed onto the substrate, to the filtersystem, and further, to the nozzle system from the filter system.

There is further provided a method of fabricating a device, including(A) fabricating a device by adhering a glass substrate and a flexiblesubstrate to each other, a thin film device has been already fabricatedon each of upper surfaces of the glass substrate and the flexiblesubstrate, the glass substrate and the flexible substrate being adheredto each other such that the upper surfaces face each other, and (B)etching the glass substrate and the flexible substrate through lowersurfaces thereof, the step (B) including preparing an apparatus foretching a substrate, and etching the glass substrate containing silicondioxide as a principal constituent at an etching rate equal to or higherthan 2 micrometers per a minute by means of the apparatus, wherein theapparatus includes (a) a nozzle system including at least one nozzlethrough which acid solution containing at least hydrofluoric acid issprayed onto the substrate, (b) a mover which moves at least one of thenozzle system and the substrate relative to the other in a predetermineddirection in such a condition that the substrate and the nozzle systemface each other, (c) a filter system which filters off particles out ofthe acid solution having been sprayed onto the substrate, and (d) acirculation system which circulates the acid solution having beensprayed onto the substrate, to the filter system, and further, to thenozzle system from the filter system.

The above and other objects and advantageous features of the presentinvention will be made apparent from the following description made withreference to the accompanying drawings, in which like referencecharacters designate the same or similar parts throughout the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an etching apparatus for etching a substrate, inaccordance with the first exemplary embodiment.

FIG. 2 is an enlarged view of a part of an etching apparatus inaccordance with the second exemplary embodiment.

FIG. 3 is an enlarged view of a part of an etching apparatus inaccordance with the third exemplary embodiment.

FIG. 4 is a graph showing a relation between an average etching rate atwhich the glass substrate was etched, and a pressure of shower inExample 1.

FIG. 5 is a graph showing a relation between the uniformity of anetching rate and a shower/jet pressure in Example 1.

FIG. 6 is a graph showing a relation among an average etching rate, theetching rate uniformity, and a concentration of hydrofluoric acid, withrespect to the shower etching in Example 1.

FIG. 7 is a graph showing a relation between a gate voltage and a draincurrent in a thin film transistor before the thin film transistor istransferred onto a resin substrate, and a relation between a gatevoltage and a drain current in the thin film transistor after the thinfilm transistor was transferred onto a resin substrate, in Example 1.

FIG. 8 illustrates an etching bath, a nozzle system, a substrate, and asubstrate holder in an etching apparatus in accordance with Example 2.

FIG. 9 illustrates principal parts of an etching apparatus in accordancewith Example 3.

DESCRIPTION OF THE EXEMPLARY EMBODIMENTS

Exemplary embodiments in accordance with the present invention will beexplained hereinbelow with reference to drawings.

[First Exemplary Embodiment]

FIG. 1 illustrates an etching apparatus 100 for etching a substrate, inaccordance with the first exemplary embodiment.

As illustrated in FIG. 1, the etching apparatus 100 is comprised of anetching bath 10 in which a substrate 14 is etched, a substrate holder 11holding the substrate 14 in the etching bath 10, a nozzle system 12which sprays acid solution 16 to the substrate 14 held by the substrateholder 11, a mover 35 which moves the substrate holder 11 relative tothe substrate 14, a filter system 20 which removes impurities out of theacid solution before the acid solution is supplied again to the nozzlesystem 12 after the acid solution was sprayed onto the substrate 14, acirculation system 40 which supplies the acid solution contained in theetching bath 10 after having been sprayed onto the substrate 14, againto the nozzle system 12 through the filter system 20, and a water supplysystem 50 which supplies water to the nozzle system 12.

The etching apparatus 100 further includes a water conduit 26, acirculation pump 27 which supplies water to the nozzle system 12 throughthe water conduit 26, a fluid-pressure meter 25 which measuring apressure of the acid solution 16 passing through a later-mentionedsecond conduit 62, and a controller 70 which receives a signalindicative of a pressure of the acid solution 16 from the fluid-pressuremeter 25, and further, controls operation of the first pump 18, thesecond pump 24 and the circulation pump 27.

For instance, the substrate 14 to be etched by the etching apparatus 100is in a planar form.

The acid solution 16 contains at least hydrofluoric acid.

The substrate holder 11 is moved by the mover 35 in such a condition asholding the substrate 14 to be etched. For instance, the substrateholder 11 is vertically or horizontally moved, or rotated by the mover35. As an alternative, the substrate holder 11 may be vertically orhorizontally moved during being rotated. When the substrate holder 11 isvertically or horizontally moved by the mover 35, the substrate holder11 is vertically or horizontally reciprocated.

That is, the mover 35 is designed to be able to move the substrate 14relative to the nozzle system 12 in a desired direction, keeping thesubstrate 14 and the nozzle system 12 facing each other, during thesubstrate 14 is being etched.

The nozzle system 12 includes a plurality of nozzles 13 arranged in aplane.

The nozzles 13 are directed towards the substrate 14 held by thesubstrate holder 11, and designed to be able to spray either the acidsolution 16 or water in the form of a shower 15 onto a surface of thesubstrate 14 held by the substrate holder 11.

As an alternative, the nozzles 13 may be designed to spray the acidsolution 16 or water in the form of mist onto the substrate 14.

The substrate holder 11 holds the substrate 14 so as not to existbetween the nozzles 13 and the substrate 14.

The acid solution 16 having been sprayed onto a surface of the substrate14 through the nozzles 13 drops off a surface of the substrate 14, andthen, is collected in the etching bath 10.

After having etched the substrate 14, the acid solution 16 containsminute particles 17 composed of materials insoluble to the acid solution16.

The circulation system 40 is comprised of, for instance, a first conduit19 through which the acid solution 16 is fed into a container 61 of thefilter system 20 from the etching bath 10, a second conduit 62 throughwhich the acid solution 16 is fed to the nozzle system 12 from thecontainer 61 of the filter system 20, a first pump 18 arranged in thefirst conduit 19 for feeding the acid solution 16 to the container 61 ofthe filter system 20 from the etching bath 10, and a second pump 24arranged in the second conduit 62 for feeding the acid solution 16 tothe nozzle system 12 from the container 61 of the filter system 20.

The fluid-pressure meter 25 is arranged in the second conduit 62 formeasuring a pressure of the acid solution 16 in the second conduit 62.

The acid solution 16 accumulated in the etching bath 10 is dischargedout of the etching bath 10 by the first pump 18, and then, fed into thecontainer 61 of the filter system 20 through the first conduit 19.

The filter system 20 is comprised of a container 61 temporarilycontaining the acid solution 16 having been introduced thereinto throughthe first conduit 19 from the etching bath 10, a rotator 22 whichproduces vortexes 21 in the acid solution 16 in the container 61, and aparticle collector 23 which collects the minute particles 17precipitating at an inner edge of the container 61.

The rotator 22 is comprised of, for instance, a rotation unit 63including a plurality of blades (for instance, four blades asillustrated in FIG. 1), and a driver (not illustrated) such as a motorfor rotating the rotation unit 63 in a horizontal plane.

There are produced vortexes 21 in the acid solution 16 in the container61 by rotating the rotation unit 63.

When viewing the filter system 20 from above, the particle collector 23is situated outside of the rotation unit 63.

For instance, the particle collector 23 is cylindrical and open at anupper end thereof. For instance, a plurality of the particle collectors23 is disposed at a bottom and at an inner edge of the container 61.

It should be noted that the particle collector 23 may be designed tohave a structure other than a structure illustrated in FIG. 1. Theparticle collector 23 may have any structure, if it can accumulate theminute particles 17 precipitating at an inner edge of the container 61.

For instance, the particle collector 23 may be comprised of an outerwall standing along an inner wall of the container 61, an inner wallwhich is concentric with the outer wall, but has a smaller diameter thana diameter of the outer wall, and a bottom plate extending between lowerends of the outer and inner walls.

Since vortexes 21 are produced by means of the rotator 22 in the acidsolution 16 in the container 61, the minute particles 17 contained inthe acid solution 16 move towards an inner edge of the container 61 bycentrifugation, that is, move towards out of a rotation radius of therotator 22, and simultaneously precipitate.

Thus, the minute particles 17 precipitating in the container 61 arecollected in the particle collectors 23 arranged at a bottom and alongan inner edge of the container 61.

As a result, the clean acid solution 16, that is, the acid solution 16containing almost no minute particles 17 is accumulated at a center ofthe container 61.

The thus cleaned acid solution 16 is discharged by the second pump 24into the nozzle system 12 through the second conduit 62 connecting tothe container 61 at a center of a bottom of the container 61.

The acid solution 16 supplied again to the nozzle system 12 is sprayedonto the substrate 14 through the nozzles 13.

The above-mentioned circulation of the acid solution 16 makes itpossible to keep supplying the clean acid solution 16 to the substrate14 through the nozzle system 12.

In place of using the rotator 22, the vortexes 21 may be produced in theacid solution 16 within the container 61 by rotating the container 61 ina horizontal plane. The acid solution 16 can be cleaned by means of thefilter system 20 also by rotating the container 61 in a horizontalplane.

In order to enhance a throughput, it is quite effective to etch thesubstrate at a high etching rate through the use of the acid solution16.

However, the minute particles 17 insoluble to the acid solution 16 mayswiftly deposit on a surface of the substrate 14, in which case, thedeposit partially prevents etching of the substrate 14, resulting insignificant deterioration of uniformity in etching the substrate 14.

As a solution to such a problem, the etching apparatus 100 in accordancewith the first exemplary embodiment is designed to control an intensityof the shower 15 by varying a discharge pressure of the second pump 24,to thereby dynamically remove the deposit composed of the minuteparticles 17 by means of the shower 15. A discharge pressure of thesecond pump 24 can be monitored by the fluid-pressure meter 25.Accordingly, it would be possible to control an intensity of the shower15 applied to a surface of the substrate 14 to a suitable intensity bycontrolling an output (that is, revolution per minute) of the secondpump 24 such that a discharge pressure monitored by the fluid-pressuremeter 25 becomes a desired pressure.

To this end, the etching apparatus 100 is designed to include thecontroller 70 receiving a signal indicative of a pressure of the acidsolution 16 from the fluid-pressure meter 25, and controlling an outputof the second pump 24 in accordance with the received pressure of theacid solution 16.

For instance, the controller 70 controls a flow rate of the acidsolution 16 such that the substrate 14 is etched at an etching rateequal to or higher than 2 micrometers per a minute in the case that thesubstrate 14 is composed of glass containing silicon dioxide as aprincipal constituent.

For another instance, the controller 70 controls a flow rate of the acidsolution 16 such that the acid solution 16 is sprayed through thenozzles 13 at a pressure in the range of 0.05 MPa and 0.7 MPa bothinclusive.

The controller 70 may be designed to control not only an output of thesecond pump 24, but also an output of the first pump 18 and thecirculation pump 27.

In the first exemplary embodiment, the filter system 20 is of acentrifugal type for producing the vortexes 21 in the acid solution 16as mentioned above. As an alternative, the filter system 20 may bedesigned to include a mesh filter for filtering the acid solution 16.

In a filter system in which the acid solution 16 is filtered by means ofa mesh filter, the acid solution 16 is caused to pass through a meshfilter to capture the minute particles 17 on the mesh filter. Thus, theacid solution 16 is cleaned.

However, if a mesh filter is clogged by the minute particles 17, a flowrate of the acid solution 16 would be deteriorated.

In contrast, the centrifugal type filter system 20 illustrated in FIG. 1has an advantage that a flow rate of the acid solution 16 is notdeteriorated. When the minute particles 17 are accumulated in theparticle collector 23 to some degree, the particle collector 23 may beexchanged into a new one, or may be washed.

When the substrate 14 is etched at a high etching rate through the useof the acid solution 16, even if the shower 15 of the acid solution 16is stopped when etching finishes, the acid solution 16 adhered to asurface of the substrate 14 due to surface tension would continueetching the substrate 14.

Since a volume of the acid solution 16 adhered to a surface of thesubstrate 14 due to surface tension is random in dependence on aposition within the surface, the etching caused by the acid solution 16adhered to a surface of the substrate 14 due to surface tensiondeteriorates the uniformity in a thickness of the substrate 14.

In the etching apparatus 100 in accordance with the first exemplaryembodiment, the circulation pump 27 is designed to be able to supplywater to the nozzle system 12 through the water conduit 26, after theshower 15 of the acid solution 16 was stopped from being suppliedthrough the nozzle system 12. Thus, it is possible to wash a surface ofthe substrate 14 with the shower 15 of water.

Specifically, the controller 70 stops operation of the first and secondpumps 18 and 24 for stopping supplying the shower 15 of the acidsolution 16, and immediately thereafter, starts operation of thecirculation pump 27 to supply water to the nozzle system 12 through thewater conduit 26. Thus, the shower 15 of water washes a surface of thesubstrate 14.

Consequently, it is possible to prevent the above-mentioned undesiredetching of the substrate 14.

In the etching apparatus illustrated in FIG. 1, the substrate 14vertically stands, and the shower 15 of the acid solution 16 ishorizontally sprayed. In contrast, the substrate 14 may be arranged tohorizontally lie, and the shower 15 of the acid solution 16 may bevertically upwardly or downwardly sprayed onto the substrate 14.

In the etching apparatus illustrated in FIG. 1, the mover 35 moves theetching 14 relative to the nozzle system 12 during the substrate 14 isbeing etched. In contrast, the mover 35 may be designed to move thenozzle system 12 relative to the substrate 14 during the substrate 14 isbeing etched, in which case, it is necessary for the second conduit 62and the water conduit 26 to have flexible a portion disposed closed tothe nozzle system 12 so as not to interfere with the movement of thenozzle system 12.

Since the etching apparatus 100 in accordance with the first exemplaryembodiment is designed to include the nozzle system 12 including aplurality of nozzles 13 arranged in a plane which can spray the acidsolution 16 containing at least hydrofluoric acid onto the substrate 14in the shower 15, it would be possible to effectively prevent the minuteparticles 17 from adhering to a surface of the substrate 14, andaccomplish a high etching rate.

Specifically, it would be possible to accomplish an etching rate in therange of 10 to 20 micrometers per a minute both inclusive, ensuring athroughput about twice to about four times higher than a conventionalthroughput.

Even if a large-size substrate 14 is etched at such a high etching rate,dispersion in an etching rate in a plane of the substrate 14 would beabout 5%, ensuring no problems in practical use.

Since a throughput in a glass-etching process is significantly improved,it would be possible to remarkably enhance a fabrication yield of aquite thin liquid crystal display panel, for instance.

Furthermore, since the mover 35 moves at least one of the nozzle system12 and the substrate 14 relative to the other in a predetermineddirection in such a condition that the substrate 14 and the nozzlesystem 12 face each other, it would be possible to supply the acidsolution 16 to the substrate 14 uniformly at a surface thereof, ensuringuniformity in etching the substrate 14.

Furthermore, since the filter system 20 removes the minute particles 17out of the acid solution 16 before the acid solution 16 having beensprayed onto the substrate 14 is supplied again to the nozzle system 12,it would be possible to always supply the clean acid solution 16, thatis, the acid solution containing almost no minute particles 17, onto thesubstrate 14, ensuring that the substrate 14 is kept uniformly etched.

[Second Exemplary Embodiment]

In an etching apparatus in accordance with the second exemplaryembodiment, a relation among a distance D between a surface of thesubstrate 14 and the nozzle 13, a maximum space Lmax between the nozzles13 disposed adjacent to each other in the nozzle system 12, and an angleθ by which the acid solution 16 or water sprayed out of the nozzle 13expands is defined to thereby enhance uniformity in etching thesubstrate 14 in a plane thereof.

FIG. 2 is an enlarged view of a part of an etching apparatus inaccordance with the second exemplary embodiment.

Specifically, FIG. 2 illustrates only the nozzle system 12 and thesubstrate 14 held by the substrate holder 11 (not illustrated in FIG.2).

In an etching apparatus in accordance with the second exemplaryembodiment, the distance D, the maximum space Lmax, and the angle θ aredefined in accordance with the relation (A), as illustrated in FIG. 2.Lmax/2<D×tan(θ/2)  (A)

By defining the distance D, the maximum space Lmax, and the angle θ inaccordance with the relation (A), spraying ranges of the shower 15 ofthe acid solution 16 adjacent to each other in a surface of thesubstrate 14 overlaps each other. Thus, the shower 15 of the acidsolution 16 is supplied entirely and uniformly onto the substrate 14,ensuring uniformity in etching the substrate 14.

In actually designing the arrangement of the nozzles 13, it ispreferable that a space between the nozzles 13 disposed adjacent to eachother is constant, in which case, the maximum space Lmax is constant,that is, is equal to a constant L.

It should be noted that it is not necessary to design a space betweenadjacent nozzles 13 to be constant. For instance, a density at which thenozzles 13 are arranged may be arbitrarily determined. For instance, adensity at which the nozzles 13 are arranged for covering a marginalarea of the substrate 14 may be lower than a density at which thenozzles 13 are arranged for covering a central area of the substrate 14,in which case, the distance D, the maximum space Lmax, and the angle δare defined so as to satisfy the relation (A).

The etching apparatus in accordance with the second exemplary embodimentis identical in structure to the etching apparatus 100 in accordancewith the first exemplary embodiment except that the distance D, themaximum space Lmax, and the angle θ are defined in accordance with therelation (A).

In the etching apparatus in accordance with the second exemplaryembodiment, since the distance D, the maximum space Lmax, and the angleθ are defined in accordance with the relation (A), it would be possibleto enhance etching uniformity in a plane of the substrate 14.

[Third Exemplary Embodiment]

In an etching apparatus in accordance with the third exemplaryembodiment, a relation between a maximum space Lmax between the nozzles13 disposed adjacent to each other in the nozzle system 13, and aminimum length Mmin by which at least one of the nozzle system 12 andthe substrate 14 is moved by the mover 35 is defined to thereby enhanceuniformity in etching the substrate 14 in a plane thereof.

FIG. 3 is an enlarged view of a part of an etching apparatus inaccordance with the third exemplary embodiment.

Specifically, FIG. 3 illustrates only the nozzle system 12 and thesubstrate 14 held by the substrate holder 11 (not illustrated in FIG.3).

In an etching apparatus in accordance with the third exemplaryembodiment, the maximum space Lmax and the minimum length Mmin aredefined in accordance with the relation (B), as illustrated in FIG. 3.Lmax/2<Mmin  (B)

By defining the maximum space Lmax and the minimum length Mmin inaccordance with the relation (B), even if the above-mentioned relation(A) is not satisfied, spraying ranges of the shower 15 of the acidsolution 16 adjacent to each other in a surface of the substrate 14overlaps each other. Thus, the shower 15 of the acid solution 16 issupplied entirely and uniformly onto the substrate 14, ensuringuniformity in etching the substrate 14.

In actually designing the arrangement of the nozzles 13, it ispreferable that a space between the nozzles 13 disposed adjacent to eachother is constant, in which case, the maximum space Lmax is constant,that is, is equal to a constant L.

It should be noted that it is not necessary to design a space betweenadjacent nozzles 13 to be constant. For instance, a density at which thenozzles 13 are arranged may be arbitrarily determined. For instance, adensity at which the nozzles 13 are arranged for covering a marginalarea of the substrate 14 may be lower than a density at which thenozzles 13 are arranged for covering a central area of the substrate 14,in which case, the maximum space Lmax and the minimum length Mmin aredefined so as to satisfy the relation (B).

The etching apparatus in accordance with the third exemplary embodimentis identical in structure to the etching apparatus 100 in accordancewith the first exemplary embodiment except that the maximum space Lmaxand the minimum length Mmin are defined in accordance with the relation(B).

In the etching apparatus in accordance with the third exemplaryembodiment, since the maximum space Lmax and the minimum length Mmin aredefined in accordance with the relation (B), it would be possible toenhance etching uniformity in a plane of the substrate 14.

The etching apparatus in accordance with the third exemplary embodimentmay be designed to satisfy the above-mentioned relation (A) having beenexplained in the second exemplary embodiment.

It is preferable in the above-mentioned first to third exemplaryembodiments to control a discharge amount of the acid solution 16sprayed out of the nozzles 13 in order to effectively remove the minuteparticles 17 adhered to a surface of the substrate 14 during beingetched. To this end, it is preferable to control each of the nozzles 13to discharge the acid solution 16 by 0.1 liter or more per a minute. Ifa discharge amount of the acid solution 16 to be discharged out of thenozzle 13 is smaller than 0.1 liter, dynamic removal action acting onthe substrate 14 might be too weak with the result of failure inpreventing the minute particles 17 from adhering the substrate 14.

Hereinbelow are explained specific examples of an etching apparatus inaccordance with the present invention.

EXAMPLE 1

Example 1 is explained hereinbelow with reference to FIG. 1.

As the substrate 14, there was used a glass substrate on which apolysilicon thin film transistor (thin film transistor array) had beenalready fabricated. The glass substrate had a size of 370 mm×470 mm, anda thickness of 0.7 mm.

A PET film as a protection film was adhered by means of an adhesive ontoa surface of the glass substrate on which the polysilicon thin filmtransistor had been already fabricated.

The glass substrate was set to be held by the substrate holder 11.

There was used a mixture of hydrofluoric acid, hydrochloric acid, andwater as the acid solution 16.

The nozzles 13 were arranged in a matrix in the nozzle system 12 suchthat a space between adjacent ones was constant, specifically, thenozzles 13 were equally spaced to one another by a distance of 40 mm.The nozzle system 12 had a size of 500 mm×600 mm.

A distance between summits of the nozzles 13 and a surface of thesubstrate 14 was set equal to 40 mm.

Varying a discharge pressure of the shower 15 of the acid solution 16 inthe range of 0.1 MPa to 0.3 MPa, the glass substrate was etched througha lower surface thereof, that is, a surface opposite to a surface onwhich the polysilicon thin film transistor had been already fabricated.

An angle by which the shower 15 expands was about 60 degrees.

During the substrate 14 is etched, the substrate 14 was moved by themover 35 both vertically and horizontally at a frequency in the range of0.3 to 2 Hz by a movement length of 40 mm.

The figures mentioned above satisfy the above-mentioned relations (A)and (B).

After the etching of the glass substrate has been finished, the shower15 of the acid solution 16 was ceased, and then, in five seconds, waterwas sprayed onto the substrate 14 through the nozzles 13. Thus, thesubstrate 14 was washed with the water shower 15.

A glass substrate generally used for fabrication of a polysilicon thinfilm transistor and an amorphous silicon thin film transistor containssilicon dioxide (or silicon oxide) as a principal constituent, andadditionally contains metal oxide such as barium oxide, calcium oxide,strontium oxide and aluminum oxide at about 5 to about 25%.

During the glass substrate is being etched, there are produced fluoridesof the above-mentioned metals. The thus produced fluorides have quitesmall solubility to acid or water.

As a result, the fluorides of the metals remain as the minute particles17 in the acid solution 16 and/or on a surface of the substrate 14.

If the minute particles 17 are adhered to a surface of the substrate 14,the minute particles 17 would partially prevent the substrate 14 frombeing etched, resulting in deterioration in etching uniformity at asurface of the substrate 14. The related art was accompanied with such aproblem.

The etching apparatus 100 illustrated in FIG. 1 accomplished quite highetching uniformity by dynamically remove the minute particles 17 off asurface of the substrate 14 by virtue of a pressure of the shower 15 ofthe acid solution 16.

Furthermore, the minute particles 17 composed of the above-mentionedfluorides of the metals were effectively caught due to centrifugationand/or precipitation in the particle collectors 23 arranged in thevicinity of or along an inner wall of the container 61 of the filtersystem 20.

FIG. 4 is a graph showing a relation between an average etching rate atwhich the glass substrate was etched, and a pressure of the shower 15.

In FIG. 4, the acid solution 16 contained hydrofluoric acid at 8.2mol/kg.

The average etching rate illustrated in FIG. 4 was calculated bymeasuring etching rates at sixteen points in the glass substrate.

For comparison, FIG. 4 also shows a relation between an average etchingrate and a pressure of jet used in conventional etching of a glasssubstrate.

In the conventional etching of a glass substrate, a glass substrate wasentirely immersed into acid solution, and jet was supplied onto asurface of the glass substrate in the acid solution.

As is obvious in FIG. 4, the shower 15 in Example 1 makes it possible toetch a glass substrate at an etching rate higher than an etching rateaccomplished in the conventional jet etching, even if the acid solutioncontains hydrofluoric acid at the same concentration.

The high-rate etching accomplished in Example 1 enhances a fabricationyield.

In addition, an etching rate remains almost constant in a broad range ofa pressure of the shower in the shower etching in Example 1.

This indicates that Example 1 has a wide process window relative to apressure. That is, there is almost no fluctuation in an etching rate,even if there is fluctuation in a pressure, ensuring enhancement in afabrication yield.

FIG. 5 is a graph showing a relation between the uniformity of anetching rate and a shower/jet pressure.

The uniformity U of an etching rate is defined as follows:U=(ERmax−ERmin)/ERave

wherein ERmax indicates a maximum etching rate among etching ratesmeasured at the above-mentioned sixteen points, ERmin indicates aminimum etching rate among etching rates measured at the above-mentionedsixteen points, and ERave indicates an average etching rate of etchingrates measured at the above-mentioned sixteen points.

As is obvious in FIG. 5, the shower etching in Example 1 accomplishesthe etching rate uniformity of about 5%. This means that a glasssubstrate is quite uniformly etched.

In the conventional jet etching, the etching rate uniformity is improvedby virtue of an increase in a jet pressure, but the etching rateuniformity is over 10%, even when a jet pressure is high, specifically,a jet pressure is 0.3 MPa.

The average etching rate observed when a jet pressure is 0.3 MPa isabout 10 micrometers per a minute in view of FIG. 4. Accordingly, it isestimated that a maximum etching rate is about 10.5 micrometers per aminute, and a minimum etching rate is about 9.5 micrometers per aminute.

If a glass substrate having a thickness of 0.7 mm is etched for sixtyminutes at an etching rate having such dispersion, the glass substratewould have a thinnest portion having a thickness of 70 micrometers and athickest portion having a thickness of 130 micrometers. That is, theglass substrate has a significant thickness profile.

Accordingly, it is necessary to ensure the etching rate uniformity to beabout 5% in order to uniformly etch a glass substrate to a thickness ofabout 100 micrometers. Thus, Example 1 provides a great advantage foretching a glass substrate.

FIG. 6 is a graph showing a relation among an average etching rate, theetching rate uniformity, and a concentration of hydrofluoric acid, withrespect to the shower etching in Example 1.

As is obvious in FIG. 6, an etching rate increases in proportion with aconcentration of hydrofluoric acid, and the etching rate uniformityremains almost constant regardless of a concentration of hydrofluoricacid. Specifically, the etching rate uniformity remains equal to about5%.

As is obvious in view of FIGS. 4 to 6, the etching apparatus inaccordance with Example 1 makes it possible to accomplish a high etchingrate and high etching-rate uniformity in etching a glass substrate, bothof which were not accomplished in the related art, with a broad processwindow by carrying out the shower etching.

The glass substrate was thinned to a thickness of 80 micrometers by theshower etching in Example 1. Then, a resin film having a thickness of100 micrometers was attached to an etched surface of the glasssubstrate. Then, the thin film transistor array was transferred onto theresin substrate by peeling off the protection PET film.

A total thickness of the resultant thin film transistor array and theresin substrate was about 200 micrometers, and the resultant thin filmtransistor array formed on the resin substrate has flexibility.

FIG. 7 is a graph showing a relation between a gate voltage and a draincurrent in a thin film transistor before the thin film transistor istransferred onto a resin substrate, and a relation between a gatevoltage and a drain current in the thin film transistor after the thinfilm transistor was transferred onto a resin substrate.

The relation between a gate voltage and a drain current in a thin filmtransistor “before” the thin film transistor is transferred onto a resinsubstrate indicates a relation between a gate voltage and a draincurrent in a thin film transistor formed on the glass substrate having athickness of 0.7 mm. In FIG. 7, the solid line indicates the relationobserved before the thin film transistor is transferred onto a resinsubstrate, and the broken line indicates the relation observed after thethin film transistor was transferred onto a resin substrate.

As is obvious in FIG. 7, the relation between a gate voltage and a draincurrent remains almost the same during “before” the thin film transistoris transferred onto a resin substrate to “after” the thin filmtransistor was transferred onto a resin substrate. This means that theshower etching in Example 1 does not damage the thin film transistor.

EXAMPLE 2

Example 2 is explained hereinbelow with reference to FIG. 8.

FIG. 8 illustrates only the etching bath 10, the nozzle system 12, thesubstrate 14, and the substrate holder 11.

As the substrate 14, there was used a glass substrate on which apolysilicon thin film transistor had been already fabricated. The glasssubstrate had a size of 300 mm×350 mm, and a thickness of 0.7 mm.

On the glass substrate was formed a tantalum oxide film as an etchingstopper film 28. Then, on the etching stopper film 28 was formed a thinfilm transistor array as a thin film device 29, and thereafter, aprotection film 30 was attached onto the thin film device 29.

The glass substrate was etched in the same way as Example 1. When theglass substrate was thinned to about 50 micrometers, an etchantcomprised of the acid solution 16 containing acid at a firstconcentration was exchanged to an etchant comprised of the acid solution16 containing acid at a second concentration lower than the firstconcentration. The glass substrate having a thickness of about 50micrometers was all etched with the etchant comprised of the acidsolution 16 containing acid at the second concentration.

That is, the glass substrate was first etched at a relatively highetching rate through the use of an etchant comprised of the acidsolution 16 containing acid at a relatively high concentration, and therest of the glass substrate was etched for removal at a relatively lowetching rate through the use of an etchant comprised of the acidsolution 16 containing acid at a relatively low concentration.

The reason why the glass substrate was etched in such two steps is forlowering damages to the etching stopper film 28.

Though the etching stopper film 28 has a function of stopping etching,the etching stopper film 28 is not always completely stable to the acidsolution 16. In other words, even the etching stopper film 28 allows asubstrate to be etched to some degree.

If the acid solution 16 contains acid at a high concentration, theetching stopper film 28 is also etched, resulting in that the etchingstopper film 28 would lose a function of stopping etching. In order toprevent the etching stopper film 28 from losing a function of stoppingetching, the glass substrate was etched in the two steps.

The etching stopper film 28 may contain at least one of gold, platinum,silver, copper, lead, tungsten, molybdenum, tantalum, chromium, oxide ofthese metals, fluoride of these metals, nitride of these metals, andchloride of these metals. As an alternative, the etching stopper film 28may be designed to have a multi-layered structure comprised of filmscontaining at least one of gold, platinum, silver, copper, lead,tungsten, molybdenum, tantalum, chromium, oxide of these metals,fluoride of these metals, nitride of these metals, and chloride of thesemetals.

After the glass substrate was etched for removal, a resin film having athickness of 100 micrometers was attached to an etched surface of theglass substrate. Then, by peeling off the protection film, the thin filmtransistor array was transferred onto the resin substrate.

Thus, there was fabricated a thin film transistor array on a flexiblesubstrate. Similarly to Example 1 (see FIG. 7), there was almost nodifference in electrical characteristics of the thin film transistorarray between before being transferred onto a resin substrate and afterhaving been transferred onto a resin substrate.

EXAMPLE 3

Example 3 is explained hereinbelow with reference to FIG. 9.

There was fabricated a thin film transistor array as a thin film device32 on a first glass substrate 31, and further, there was fabricated acolor filter as a thin film device 34 on a second glass substrate 33.Then, the first and second glass substrates 31 and 33 were adhered toeach other such that the thin film devices 32 and 34 faced each other.Liquid crystal was introduced into a gap formed between the first andsecond glass substrates 31 and 33.

Then, the first and second glass substrates 31 and 33 were etchedthrough the use of an etching apparatus having such a structure asillustrated in FIG. 9.

FIG. 9 illustrates principal parts of an etching apparatus including anetching bath 10, and a pair of nozzle systems 12 facing each other inthe etching bath 10. One of the nozzle systems 12 is used for etchingthe first glass substrate 31, and the other is used for etching thesecond glass substrate 33.

In Example 3, both of the first and second glass substrates 31 and 33were etched into a thickness of 200 micrometers in the same way asExample 1.

Thereafter, a polarizing film was attached to each of etched surfaces ofthe first and second glass substrates 31 and 33. Thus, there wasfabricated a quite thin liquid crystal display device.

In Example 3, the glass substrate 33 on which the thin film device 34was fabricated may be replaced with a resin substrate (that is, aflexible substrate) on which a thin film device has been alreadyfabricated.

For instance, a glass substrate on which a thin film transistor array isfabricated and a resin substrate on which a color filter is fabricatedmay be adhered to each other, and then, only the glass substrate may beetched.

The etching apparatus in accordance with the above-mentioned first tothird exemplary embodiments and Examples 1 to 3 may be used forlightening, thinning or providing flexibility to a flat panel display ina liquid crystal display device or an organic electroluminescence (EL)display device. As an alternative, the etching apparatus may be usedgenerally for thinning a glass plate at a high rate.

As mentioned earlier, it is preferable in the exemplary embodiments thatthe mover moves the substrate relative to the nozzle system.

It is preferable in the exemplary embodiments that Lmax/2 is smallerthan D×tan(θ/2), that is,Lmax/2<D×tan(θ/2)

wherein Lmax indicates a maximum space between adjacent nozzles in thenozzle system, D indicates a distance between the substrate and thenozzle, and θ indicates an angle by which the acid solution sprayed outof the nozzle expands.

It is preferable in the exemplary embodiments that Lmax/2 is smallerthan Mmin, that is,Lmax/2<Mmin

wherein Lmax indicates a maximum space between adjacent nozzles in thenozzle system, and Mmin indicates a minimum length by which the at leastone of the nozzle system and the substrate is moved by the mover.

It is preferable in the exemplary embodiments that the nozzle sprays theacid solution in a volume greater than 0.1 liter per a minute.

It is preferable in the exemplary embodiments that the filter systemincludes a container which temporarily contains the acid solution beforethe acid solution is supplied to the nozzle system after the acidsolution was sprayed onto the substrate, a rotator which produces vortexin the acid solution in the container, and a particle collector whichcollects particles precipitating at an inner edge of the container.

It is preferable in the exemplary embodiments that the nozzle systemalternately sprays the acid solution and water onto the substrate.

The etching apparatus may further include a controller which controls aflow rate of the acid solution such that the substrate is etched at anetching rate equal to or higher than 2 micrometers per a minute, whenthe substrate is composed of glass containing silicon dioxide as aprincipal constituent.

The etching apparatus may further include a controller which controls aflow rate of the acid solution such that the acid solution is sprayedthrough the nozzle at a pressure in the range of 0.05 MPa and 0.7 MPaboth inclusive.

It is preferable in the exemplary embodiments that an electronic deviceis fabricated on a surface of the glass substrate, the surface beingopposite to a surface to be etched, in which case, it is preferable thatthe electronic device is comprised of a thin film transistor (TFT).

It is preferable in the exemplary embodiments that the acid solution iscomprised of a combination of hydrofluoric acid and at least one ofhydrochloric acid and nitric acid.

It is preferable in the exemplary embodiments that the acid solution issprayed through the nozzle at a pressure in the range of 0.05 MPa and0.7 MPa both inclusive.

It is preferable in the exemplary embodiments that the glass substrateis rectangular, having a side equal to or longer than 250 mm.

The method of fabricating a thin-glass substrate may further includestopping spraying the acid solution onto the substrate through thenozzle, and spraying water onto the substrate through the nozzle to washthe substrate.

In the method of fabricating a TFT array substrate, it is preferablethat the etching stopper film contains at least one of gold, platinum,silver, copper, lead, tungsten, molybdenum, tantalum, chromium, oxide ofthese metals, fluoride of these metals, nitride of these metals, andchloride of these metals.

It is preferable in the exemplary embodiments that a thin filmtransistor array is fabricated on one of the glass substrates, and acolor filter is fabricated on the other.

It is preferable in the exemplary embodiments that a thin filmtransistor array is fabricated on the glass substrate, and a colorfilter is fabricated on the flexible substrate.

The exemplary advantages obtained by the above-mentioned exemplaryembodiments are described hereinbelow.

In accordance with the above-mentioned exemplary embodiments, a glasssubstrate is not immersed into hydrofluoric acid solution, buthydrofluoric acid solution is sprayed like shower onto a glass substrateto thereby etch the glass substrate. Thus, it is possible to effectivelyprevent minute particles from attaching a surface of a glass substrate,and further, to accomplish a high etching rate.

The mover moves at least one of a nozzle system and a substrate relativeto the other in a predetermined direction in such a condition that thesubstrate and the nozzle system face each other. This ensures that thesubstrate is uniformly etched.

Before acid solution having been sprayed onto a substrate is suppliedagain to the nozzle system, minute particles are removed out of the acidsolution by means of the filter system. Thus, clean acid solution isalways supplied to the nozzle system. Hence, it is possible to keep asubstrate uniformly etched.

While the present invention has been described in connection withcertain exemplary embodiments, it is to be understood that the subjectmatter encompassed by way of the present invention is not to be limitedto those specific embodiments. On the contrary, it is intended for thesubject matter of the invention to include all alternatives,modifications and equivalents as can be included within the spirit andscope of the following claims.

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2006-184351 filed on Jul. 4, 2006, theentire disclosure of which, including specification, claims, drawingsand summary, is incorporated herein by reference in its entirety.

What is claimed is:
 1. A method of fabricating a thin-glass substrate,comprising: preparing an apparatus for etching a substrate; and etchinga glass substrate containing silicon dioxide as a principal constituentat an etching rate equal to or higher than 2 micrometers per a minute bymeans of said apparatus, said apparatus comprising: (a) a nozzle systemincluding at least one nozzle through which acid solution containing atleast hydrofluoric acid is sprayed onto said substrate; (b) a moverwhich moves at least one of said nozzle system and said substraterelative to the other in a predetermined direction in such a conditionthat said substrate and said nozzle system face each other; (c) a filtersystem which filters off particles out of said acid solution having beensprayed onto said substrate, said filter system including: a containerwhich temporarily contains said acid solution before said acid solutionis supplied to said nozzle mechanism after said acid solution wassprayed onto said substrate; a rotator which produces vortex in saidacid solution in said container; and a particle collector which collectsparticles precipitating at an inner edge of said container; and (d) acirculation system which circulates said acid solution having beensprayed onto said substrate, to said filter system, and further, to saidnozzle system from said filter system.
 2. The method as set forth inclaim 1, wherein an electronic device is fabricated on a surface of saidglass substrate, said surface being opposite to a surface to be etched.3. The method as set forth in claim 2, wherein said electronic device iscomprised of a thin film transistor (TFT).
 4. The method as set forth inclaim 1, wherein said acid solution is comprised of a combination ofhydrofluoric acid and at least one of hydrochloric acid and nitric acid.5. The method as set forth in claim 1, wherein said acid solution issprayed through said nozzle at a pressure in the range of 0.05 MPa and0.7 MPa both inclusive.
 6. The method as set forth in claim 1, whereinsaid glass substrate is rectangular, having a side equal to or longerthan 250 mm.
 7. The method as set forth in claim 1, further comprising:stopping spraying said acid solution onto said substrate through saidnozzle; and spraying water onto said substrate through said nozzle towash said substrate.
 8. A method of fabricating a device, comprising:(A) fabricating a device by adhering a glass substrate containingsilicon dioxide as a principal constituent and a flexible substrate toeach other, a thin film device has been already fabricated on each ofupper surfaces of said glass substrate and said flexible substrate, saidglass substrate and said flexible substrate being adhered to each othersuch that said upper surfaces face each other; and (B) etching only saidglass substrate through lower surfaces thereof, said step (B)comprising: preparing an apparatus for etching a substrate; and etchingsaid glass substrate at an etching rate equal to or higher than 2micrometers per a minute by means of said apparatus, said apparatuscomprising: (a) a nozzle system including at least one nozzle throughwhich acid solution containing at least hydrofluoric acid is sprayedonto said substrate; (b) a mover which moves at least one of said nozzlesystem and said substrate relative to the other in a predetermineddirection in such a condition that said substrate and said nozzle systemface each other; (c) a filter system which filters off particles out ofsaid acid solution having been sprayed onto said substrate, said filtersystem including: a container which temporarily contains said acidsolution before said acid solution is supplied to said nozzle mechanismafter said acid solution was sprayed onto said substrate; a rotatorwhich produces vortex in said acid solution in said container; and aparticle collector which collects particles precipitating at an inneredge of said container; and (d) a circulation system which circulatessaid acid solution having been sprayed onto said substrate, to saidfilter system, and further, to said nozzle system from said filtersystem.
 9. The method as set forth in claim 8, wherein a thin filmtransistor array is fabricated on said glass substrate, and a colorfilter is fabricated on said flexible substrate.